http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200928591-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G63-21 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G63-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G65-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2008-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d338fa9da212910df6f0916095817b8 |
| publicationDate | 2009-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200928591-A |
| titleOfInvention | Resist underlayer coating forming composition and method for forming resist pattern by use of the composition |
| abstract | To provide a composition for forming a resist underlayer film which is large in selection ratio of dry etching speed and, at the same time, can realize desired k value and refractive index (n) at a short wavelength as in an ArF excimer laser (wavelength: 193 nm).A resist underlayer film forming composition for lithography, comprising a polymer and a solvent, the polymer having a main chain containing a cinnamic acid derivative. The cinnamic acid derivative is introduced into the main chain of the polymer through an ester bond, or an ester bond and an ether bond. |
| priorityDate | 2007-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 112.