| abstract |
A molecular beam epitaxy (MBE) device (100) which is designed for the reactive deposition of a group III nitride compound semiconductor comprises a vacuum chamber (10) which comprises at least one molecular beam source (11) and at least one injector (12) designed to inject ammonia into the vacuum chamber (10), a first cold trap device (20) comprising at least one cold trap (21, 22) designed to condense excess ammonia, a pump device (30) comprising at least one pump (31, 33, 35) designed to evacuate the vacuum chamber (10), and a barrier device (40), by means of which the first cold trap device (20) can be separated from the vacuum chamber (10). A method for operating an MBE device is also described. |