http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200921683-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-10 |
| filingDate | 2008-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_875ce7740757c4924a52a66b94294218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40d4532e8427ed2e548cf5d84483242d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d8fe64215b793e28228d53ea3e5547 |
| publicationDate | 2009-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200921683-A |
| titleOfInvention | Memory apparatus and method thereof for operating memory |
| abstract | A memory apparatus and a method thereof for operating a memory are provided. The memory apparatus includes a plurality of memory cells, of which each memory cell shares a source/drain region with a neighboring cell. The method applies a compensation electron flow to a source/drain region between two memory cells to provide enough electron flow to program one of the two memory cells even under the circumstances that another memory cell has a greater threshold voltage, such that the dispersion of programming speed of the memory cells is reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102446549-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102446549-B |
| priorityDate | 2007-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.