| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95585944cd76ddfb6dc33ed2a0b84403 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-342
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2101-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2101-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09B57-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09B57-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09B57-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K9-02 |
| filingDate |
2008-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25f0dd8fea72de515e28070d4bdd1f10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c36400263e5f621db5e563a0c9b21a9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5eb62092c42e704a30a85b7eede9bd7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8f0ae2abc8097290d5acd2a0f4de81d |
| publicationDate |
2009-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200920177-A |
| titleOfInvention |
Organic electroluminescence device |
| abstract |
Disclosed is an organic EL device (1) comprising an anode (3), a cathode (4), and an organic thin film layer arranged between the anode (3) and the cathode (4). The organic thin film layer has a light-emitting layer (5) containing a host, a dopant and an assist dopant. The affinity level AfH of the host, the affinity level AfD of the dopant and the affinity level AfAD of the assist dopant satisfy the following relation: AfAD > AfD > AfH. The lowest excited singlet-state energy gap EgD of the dopant and the lowest excited singlet-state energy gap EgAD of the assist dopant satisfy the following relation: EgD < EgAD. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105453294-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11450817-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105453294-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10862047-B2 |
| priorityDate |
2007-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |