http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200919119-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e4c608a8531ea588aab7e23318e09a77 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2007-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53af2eb49c29cfeb66450fa31ad3f40f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e2ea85f1200ea0611a6ca21e382bc11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f40300cca4742baf9852141ab568be6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4acfcecabcda8f43bd922246332b27f |
| publicationDate | 2009-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200919119-A |
| titleOfInvention | Photoresist stripper with low etching rate |
| abstract | The invention discloses a photoresist stripper with low etching rate, comprising: benzyl alcohol and/or the derivatives thereof, quaternary ammonium hydroxide, and dimethyl sulfoxide. The stripper of the invention can be used for removing photoresists and other residues on metal, compound metals, or dielectric material, and at the same time, the stripper exhibits low etching rate for SiO2, copper, low-k material, and so on. Therefore, the stripper of the invention has good future for application in the microelectronics fields such as semiconductor wafer cleaning. |
| priorityDate | 2007-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 216.