http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200917488-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec66325a8fa7267614e836161696a38e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2007-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89510410b58e1e7051587182bf86a9a9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8c50f30f845a5813f8c1c7eb190064c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40ac2f997251d7fcea8c7c3eb10eec51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a636e013995916adb598c81ed000cac |
| publicationDate | 2009-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200917488-A |
| titleOfInvention | Hillock-free thin film transistors |
| abstract | A thin film transistor includes a first substrate, a gate electrode is forming on the substrate and a gate insulation layer is forming on the gate electrode. An amorphous silicon layer is forming on the gate insulation layer. A source/drain electrode is forming on the amorphous silicon layer and between source/drain electrode has a channel layer corresponding over the gate electrode. A passivation layer is forming on the source/drain electrode and filling with the channel layer. Wherein the gate electrode or the source/drain electrode includes an aluminum metal layer that is a metal layer containing aluminum as a principal component; a buffer layer is forming on the aluminum metal layer and the buffer layer including an aluminum-germanium or aluminum- gadolinium or aluminum-germanium-gadolinium alloy. |
| priorityDate | 2007-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.