| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| filingDate |
2007-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4b05b3dc4e45ed002c7a917b9922d59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd63599a7290698f1e07c19e9007c5bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92494e9ae540331e549bbedd21c793b8 |
| publicationDate |
2009-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200917420-A |
| titleOfInvention |
Phase change memory cell array with self-converged bottom electrode and method for manufacturing |
| abstract |
An array of phase change memory cells is manufactured by forming a separation layer over an array of contacts, forming a patterning layer on the separation layer and forming an array of mask openings using lithographic process. Etch masks are formed within the mask openings by a process that compensates for variation in the size of the mask openings that result from the lithographic process. The etch masks are used to etch through the separation layer to define an array of electrode openings exposing the underlying contacts. Electrode material is deposited within the electrode openings; and memory elements are formed over the bottom electrodes. Finally, bit lines are formed over the memory element to complete the memory cells. In the resulting memory array, the critical dimension of the top surface of bottom electrode varies less than the width of the memory elements in the mask openings. |
| priorityDate |
2007-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |