| abstract |
Disclosed is a polishing composition having a higher polishing rate, while suppressing formation of recesses or dishing. Specifically disclosed is a polishing composition suitable for a metal film, in particular a copper (Cu) film, which contains ammonia, hydrogen peroxide, an amino acid, an anionic surfactant and the balance of water. By containing such components, the polishing composition enables to suppress formation of recesses and dishing particularly when it is used in a two-step polishing. |