http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200915621-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate | 2008-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cdccce20479369abe218c1d620d1a73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df143bf6884e20ea8024cd12cba0309c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05be3b5fe73643fd87fa5972ad58483b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97a4de6b04c390705034d5890575d509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b56f9daa690f2d441a3e63026329f8ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5488805d918db6b608d66f84b7b38c34 |
| publicationDate | 2009-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200915621-A |
| titleOfInvention | Optoelectronic component comprising a layer stack |
| abstract | Optoelectronic component (20) comprising a layer stack (10) comprising at least the following: - a layer sequence representing a semiconductor light-emitting diode (15) and comprising at least a first light-emitting diode layer (2), a second light-emitting diode layer (4) and an optically active zone (3) between the first (2) and the second light-emitting diode layer (4), the two light-emitting diode layers (2, 4) in each case being formed from a III-V semiconductor material which contains in each case at least one of the elements aluminium, gallium and indium and in each case at least one of the elements nitrogen, phosphorus and arsenic, and the first light-emitting diode layer (2) being an n-doped layer and the second light-emitting diode layer (4) being a p-doped layer, - a silver-containing metallic layer (9), and - an interlayer (8) composed of a transparent conductive oxide, said interlayer being arranged between the semiconductor light-emitting diode (15) and the metallic layer (9), characterized in that the metallic layer (9) and the interlayer (8) are arranged on that side of the semiconductor light-emitting diode (15) which the p-doped second light-emitting diode layer (4) faces, and in that at least one highly doped first semiconductor layer (7) having a dopant concentration greater than the dopant concentration of the second light-emitting diode layer (4) is arranged between the second light-emitting diode layer (4) and the interlayer (8). |
| priorityDate | 2007-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.