| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2008-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3d399368a937b40c27a11c5966e6150 |
| publicationDate |
2009-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200915395-A |
| titleOfInvention |
Method of manufacturing thin film semiconductor device |
| abstract |
The present invention provides a method of manufacturing a thin film semiconductor device. Since a crystalline silicon thin film with a stable crystallinity ratio in the film thickness direction can be formed on the substrate while maintaining a sufficient film forming rate even at a low substrate temperature, the formation of the crystalline silicon thin film directly on a substrate can be put to practical use on an industrial basis, and it is possible to obtain a thin film semiconductor device enhanced in performance through the use of the silicon thin film.; The method includes the step S2 of forming a silicon thin film including a crystalline structure on a substrate by a plasma CVD process in which a high order silane gas represented by the formula SinH2n+2 (n=2, 3, . . . ) and a hydrogen gas are used as film forming gases; and a preliminarily nucleation step S1 for producing crystalline nuclei on a substrate, a plasma CVD process or a reactivity thermal CVD method in which silane gas or germanium halides gas represented by the formula SinH2n+2 (n=2, 3, . . . ) are used as film forming gases. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11710745-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11315954-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I762086-B |
| priorityDate |
2007-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |