http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200913312-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_896d3b04669d06e88d16d52b6c865fcb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2007-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e293ea7612aee5fe7e6e71e24ed182c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a89057f68070636f770771ef58ae2c0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c480165e79c23d94ba201501cde1a7a6 |
| publicationDate | 2009-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200913312-A |
| titleOfInvention | A structure of LED and its manufacturing method |
| abstract | A structure of LED and its manufacturing method are disclosed. Substrate is placed in a solution for performing reaction so as to naturally form a chemical reaction layer on the surface of cutting channel zones. Then selective etching is used to form a plurality of concave and convex parts on the cutting channel zones. After that, epitaxial technology is adopted to grow semiconductor structure on the device zone and the cutting channel zone on the surface of the substrate. Finally, photolithography process is used to form the LED elements on the semiconductor structure on the device zone of the substrate. |
| priorityDate | 2007-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.