http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200910651-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2008-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb9c65e4b3d3c8af59f2c76dab0752b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0709cd6763214baa0ac11f7a7b9dd937 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30852e6bdb59006771c3ffe7b222dd2d |
| publicationDate | 2009-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200910651-A |
| titleOfInvention | III-nitride semiconductor light emitting device |
| abstract | A group III nitride semiconductor light-emitting device comprises an n-type gallium nitride-based semiconductor layer, a first p-type AlXGa1-XN (0<=X<1) layer, an active layer including an InGaN layer, a second p-type AlYGa1-YN (0<=Y<=X<1) layer, a third p-type AlZGa1-XN layer (0<=Z<=Y<=X<1), and a p-electrode in contact with the third p-type AlZGa1-ZN layer. The active layer is provided between the n-type gallium nitride-based semiconductor layer and the first p-type AlXGa1-XN layer. The second p-type AlYGa1-YN (0<=Y<=X<1) layer is provided on the first p-type AlXGa1-XN layer. The p-type dopant concentration of the second p-type AlYGa1-YN layer is greater than the p-type dopant concentration of the first p-type AlXGa1-XN layer. The third p-type AlZGa1-ZN layer (0<=Z<=Y<=X<1) is provided on the second p-type AlYGa1-YN layer.; The p-type dopant concentration of the second p-type AlYGa1-YN layer is greater than a p-type dopant concentration of the third p-type AlZGa1-ZN layer. |
| priorityDate | 2007-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.