| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate |
2008-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5df218e8e18dce4d5f7e78a289c055fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09afe70439fc5db2a2dc244318172332 |
| publicationDate |
2009-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200910532-A |
| titleOfInvention |
Non-volatile memory device and method for manufacturing the same |
| abstract |
A non-volatile memory device includes a substrate, an insulating layer, a charge storage layer, a multi-layer tunneling dielectric structure and gate. The substrate has a channel region. The insulating layer is disposed on the channel region. The charge storage layer is disposed on the insulating layer. The multi-layer tunneling dielectric structure is disposed on the charge storage layer. The gate is disposed one the multi-layer tunneling dielectric structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102709292-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I549197-B |
| priorityDate |
2007-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |