http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200910512-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5806524b652f8292e58694e05a348868 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B65G2249-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B65G2249-045 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B65G49-061 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B65G49-065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 |
| filingDate | 2008-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f7f7e5c6be43a6e6fa93f7912a705e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6f9f11ba924455030a81d9b36481823 |
| publicationDate | 2009-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200910512-A |
| titleOfInvention | Substrate absorbing apparatus and manufacturing method thereof |
| abstract | Provided are substrate absorbing apparatuses having a vacuum absorption mechanism as well as well as an electrostatic absorption mechanism and capable of increasing uniformity of vacuum absorption force as well as flatness of objects to be processed, and manufacturing methods thereof. A substrate absorbing apparatus 1 has a base 2, a dielectric body 3, an electrostatic absorption mechanism 4 and a vacuum absorption mechanism 5. Specifically, the dielectric body 3 is composed of an undermost dielectric layer 31, an intermediate dielectric layer 32 and an uppermost dielectric layer 33, while the electrostatic absorption mechanism 4 is composed of absorption electrodes 41, 42 and a DC power source 43. The vacuum absorption mechanism 5 is composed of trenches 51, a gas-absorbing path 52, the porous dielectric body 3 and the porous absorption electrodes 41, 42. The undermost dielectric layer 31, the intermediate dielectric layer 32 and the uppermost dielectric layer 33 are formed by thermal spraying of ceramic particle, while the absorbing electrodes 41, 42 are formed by thermal spraying of tungsten particle. Moreover, the average pore diameter and porosity of the undermost dielectric layer 31 are set to be the biggest, while the average pore diameter and porosity of the uppermost dielectric layer 33 are set to be the smallest. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103567912-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103567912-B |
| priorityDate | 2007-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.