| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32697
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32577
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4585 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2008-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f57bfa8d325c980de2d9375975a27d06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8130af925c6a1eb094a233aaee403125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d2d51dd34bc010f9d334e90708a9de2 |
| publicationDate |
2009-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200910497-A |
| titleOfInvention |
Asymmetric grounding of rectangular susceptor |
| abstract |
An asymmetrically grounded susceptor (72) used in a plasma processing chamber (40) for chemical vapor deposition onto large rectangular panels (74) supported on and grounded by the susceptor. A plurality of grounding straps (86) are connected between the periphery of the susceptor to the grounded vacuum chamber to shorten the grounding paths for RF electrons. Flexible straps allow the susceptor to vertically move. The straps provide a conductance to ground which is asymmetric around the periphery. The straps may be evenly spaced but have different thicknesses or different shapes or be removed from available grounding point and hence provide different RF conductances. The asymmetry is selected to improve the deposition uniformity and other qualities of the PECVD deposited film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I638417-B |
| priorityDate |
2007-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |