http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200909999-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-46 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80 |
| filingDate | 2005-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e964adfd8c8214215d27348b7a4030a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca9ec45d973f08c63f3563cd36b0da7b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5a5922c7613445b8da7a631a1c93ef3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0f7279171ad82bd5bd536eec5c5f9ce |
| publicationDate | 2009-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200909999-A |
| titleOfInvention | Photomask blank, photomask manufacturing method and semiconductor device manufacturing method |
| abstract | A dry etching time is shortened and a resist film reduction is reduced by increasing the dry etching speed of a light shielding film. As a result, thinning (300 nm or less) of the resist film can be performed, and pattern resolution and pattern accuracy (CD accuracy) can be improved. Furthermore, a photomask blank by which a light shielding film pattern having an excellent cross sectional shape can be formed by shortening the dry etching time, and a photomask manufacturing method are provided. The photomask blank having the light shielding film on a light transmitting board is a mask blank for dry etching process, which is applicable to the photomask manufacturing method for patterning the light shielding film by dry etching process wherein a resist pattern formed on the light shielding film is used as a mask. The light shielding film is composed of a material having a selectivity to the resist over 1 in the dry etching process. |
| priorityDate | 2004-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.