http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200908403-A

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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51454ecefd95f06e78a2b167d5c16b67
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publicationDate 2009-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200908403-A
titleOfInvention Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
abstract A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.
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