http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200905919-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b49c9cc276f860e4672c03da1c17d9b5 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2007-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbce4221d98bd8861884209c5d9221c6 |
| publicationDate | 2009-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200905919-A |
| titleOfInvention | High brightness light emitting diode |
| abstract | A high brightness light emitting diode (LED) includes a substrate, a first electrode, a semiconductor light emitting structure, a second electrode, a third electrode, an adhesive layer and a fourth electrode. The first electrode is disposed on a first side of the substrate. The semiconductor light emitting structure is disposed on a second side of the substrate opposing to the first side of the substrate. The second electrode is disposed on a side of the semiconductor light emitting side away from the substrate. The third electrode, the adhesive layer and the fourth electrode are disposed between the substrate and the semiconductor light emitting structure, wherein the adhesive layer is disposed between the third electrode and the fourth electrode, and the third and the fourth electrodes are disposed near to the substrate and the semiconductor light emitting structure respectively. |
| priorityDate | 2007-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.