| abstract |
A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer with a first state, a dielectric layer, a patterned conductive layer, an interlayer dielectric layer, a second patterned semiconductor layer with a second state, at least two first electrodes disposed on the interlayer dielectric layer, and at least two second electrodes disposed on the patterned second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region of the substrate. The dielectric layer is disposed on the substrate and the first patterned semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, the interlayer dielectric layer having at least two holes adapted to expose the first doping region and the second doping region is disposed on the dielectric layer. The patterned second semiconductor layer is disposed on a photosensitive region, and the first electrodes are electrically connected to the first patterned semiconductor layer. |