http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200903841-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
filingDate 2007-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbce4221d98bd8861884209c5d9221c6
publicationDate 2009-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200903841-A
titleOfInvention Semiconductor light emitting device
abstract An exemplary semiconductor light emitting device includes a substrate, a first-type semiconductor layer and a second-type semiconductor layer both formed on the substrate, a first electrode and a second electrode having opposite polarities to each other. The first electrode and the second electrode are electrically connected with the first-type semiconductor layer and the second-type semiconductor layer, respectively. The second electrode includes a transparent conductive layer and a patterned metal conductive layer. Regions of the transparent conductive layer distant from the patterned metal conductive layer with a minimum distance equal to or less than 300 micrometers have an total area equal to or more than 80% of an area of the transparent conductive layer occupied region.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I396280-B
priorityDate 2007-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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