http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200903779-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f063b8222ec3c8e746a415e7f364473 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72ed91cb20a3ca510bb7e85d7fae504a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ddbd9538efce6e134d471b912946264e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 2007-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c6864f015366d1358bf7fe546319a00 |
| publicationDate | 2009-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200903779-A |
| titleOfInvention | Multi-bit phase change memory array and multi-bit phase change memory |
| abstract | A multi-bit phase change memory array. The multi-bit phase change memory array comprises a plurality of phase change memory cells each comprising first and second bit lines, first and second phase change material layer and a MOS transistor. The first phase change material layer is coupled between the first and second bit lines. The second phase change material layer is coupled to a source line. The MOS transistor is coupled between the first and second material layers via source/drain regions thereof and a gate thereof is coupled to a word line. The first and second material layers have different resistances of amorphous state and different current levels for amorphization. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I449170-B |
| priorityDate | 2007-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.