http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200903566-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J63-00
filingDate 2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac24a8664068f849e8d400644dc05aa4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc231a1ba8cf8088d94ed450539202ed
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_948bce5f47fbee5b8ffc174ca81470f7
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publicationDate 2009-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200903566-A
titleOfInvention Manufacturing method of pulse-type high-voltage silicon quantum dot fluorescent lamp
abstract The invention provides a manufacturing method of pulse-type high-voltage silicon quantum dot fluorescent lamp, in which an exciting source and a pulse-type high-voltage source are used to provide an accelerated pulse-type field-effect electron source. The pulse-type high-voltage source is able to provide a voltage difference for generating a pulse-type field-effect electric field and accelerating the electrons in the pulse-type field-effect electron source. The pulse-type field-effect electron source is further employed to accelerate electrons for exciting an emitting source thereby generating a pulse-type visible light source. Therefore, the present invention is able to utilize relatively low electric energy to obtain stable high-brightness pulse-type visible light source, so that the light emitting devices can be made to form a flat silicon fluorescent lamp with energy-saving function.
priorityDate 2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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