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filingDate 2008-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2008-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200849678-A
titleOfInvention III-V nitride semiconductor layer-bonded substrate and semiconductor device
abstract Affords III-V nitride semiconductor layer-bonded substrates from which semiconductor device of enhanced properties can be manufactured, and semiconductor devices incorporating the III-V nitride semiconductor layer-bonded substrates. The III-V nitride semiconductor layer-bonded substrate, in which a III-V nitride semiconductor layer and a base substrate are bonded together, is characterized in that thermal expansion coefficient difference between the III-V nitride semiconductor layer and the base substrate is 4.5 x 10<SP>-6</SP> K-1 or less, and in that the thermal conductivity of the base substrate is 50 W*m-1* K-1 or more.
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Total number of triples: 31.