http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200849666-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2008-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ec3241098ad3a9010172182bbe26a23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0a76adc2c9973ba5a726f5765cd7a2b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f6dddede81c9a8624fcdc66f681f802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec540cc2be4dc99ffa126c599b7d46c7 |
| publicationDate | 2008-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200849666-A |
| titleOfInvention | Electrode and group III nitride-based compound semiconductor light-emitting device having the electrode |
| abstract | An object of the invention is to prevent migration of silver contained in an electrode of a Group III nitride-based compound semiconductor light-emitting device. An n-type AlxGayIn1-x-yN layer, a light-emitting layer, and a p-type AlxGayIn1-x-yN layer are formed on a dielectric substrate such as a sapphire substrate. After formation of these layers, the n-type AlxGayIn1-x-yN layer is exposed through etching or a similar technique, and an n-electrode is formed on the exposed area. A positive electrode is formed on the p-type layer. In the positive electrode, an ITO light-transmitting electrode layer, a silver alloy reflecting electrode layer, a diffusion-preventing layer in which a Ti layer and a Pt layer are stacked, and a gold thick-film electrode are sequentially stacked on the p-type layer. The reflecting electrode layer made of a silver alloy contains palladium (pd) and copper (Cu) as additives and also contains oxygen (O). By virtue of this structure, migration of silver from the silver alloy reflecting electrode layer and blackening of the interface between the silver alloy layer and the ITO light-transmitting electrode layer disposed thereunder are prevented, whereby light extraction efficiency can be enhanced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106058000-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I456797-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113903840-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106058000-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113921672-A |
| priorityDate | 2007-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.