| abstract |
A CMP slurry for silicon film having a polishing speed and a polishing speed ratio of silicon film, silicon nitride film, and silicon oxide film which are necessary for reducing the fabricating cost of semiconductor device, enhancing the yield, and performing a CMP process for forming a contact plug by a self-align method with one kind of slurry is provided. The CMP slurry includes abrasive particles, a cation surfactant and water, and the pH thereof is 6.0 to 8.0. |