| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-51 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate |
2008-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe205b6de8e0852d8d212c4a3ac37296 |
| publicationDate |
2008-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200849244-A |
| titleOfInvention |
Rectifying element for a crosspoint based memory array architecture |
| abstract |
An asymmetrically programmed memory material (such as a solid electrolyte material)is described for use as a rectifying element for driving symmetric or substantially symmetric resistive memory elements in a crosspoint memory architecture. A solid electrolyte element (SE) has very high resistance in the OFF state and very low resistance in the ON state (because it is a metallic filament in the ON state). These attributes make it a near ideal diode. During the passage of current (during program/read/erase) of the memory element, the solid electrolyte material also programs into the low resistance state. The final state of the solid electrolyte material is reverted to a high resistance state while making sure that the final state of the memory material is the one desired. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I596610-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I394231-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I500192-B |
| priorityDate |
2007-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |