http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200848931-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate | 2007-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfd817b3b4b7b6b42ab0ea6796adcec2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8be26214ef5d46c5c9c255a73e794e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bffa4a732672dd927e60534c6ed14fee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fe31c7f752d5635a0862605fc049271 |
| publicationDate | 2008-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200848931-A |
| titleOfInvention | Positive resist material and pattern forming method |
| abstract | To provide a resist material having very high resolution in contact hole pattern formation in an ArF lithography technique and providing a high-rectangularity pattern which ensures good mask faithfulness and good roundness. The positive resist material contains: a resin component (A) which becomes soluble in an alkali developer under the action of an acid; and a compound (B) which generates an acid in response to an actinic ray or radiation, wherein the resin component (A) is a high molecular compound having a repeating unit represented by a general formula (1), wherein R<SP>1</SP>is H or methyl; R<SP>2</SP>is methyl or ethyl; R<SP>3</SP>is H or CO<SB>2</SB>R<SP>5</SP>; R<SP>4</SP>is a fluorine-containing substituent; R<SP>5</SP>is a monovalent hydrocarbon group which may contain a hetero atom; n is 1 or 2; a is 0.30-0.60, b is 0.15-0.40, c is 0.10-0.50, and d is 0.01-0.30; and a+b+c+d=1. |
| priorityDate | 2006-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 596.