Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
filingDate |
2008-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd199a013f40f17382e5a2a0b90138ea |
publicationDate |
2008-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-200848558-A |
titleOfInvention |
Gallium nitride substrate and gallium nitride film deposition method |
abstract |
Affords high-carrier-concentration, low-cracking-incidence gallium nitride substrates and methods of forming gallium nitride films. A gallium nitride film 52 in which the carrier concentration is 1 x 10<SP>17</SP> cm<SP>-3</SP> or more is created. Initially, a gallium nitride layer 51 including an n-type dopant is formed onto a substrate 50. Then, the gallium nitride layer 51 formed on the substrate 50 is heated to form a gallium nitride film 52. |
priorityDate |
2007-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |