http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200847413-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72ed91cb20a3ca510bb7e85d7fae504a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2007-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa0e5a4d5b87c881dc0c4086d44b0f9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1b8e05893c56544ac70717fed5ba5c5 |
| publicationDate | 2008-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200847413-A |
| titleOfInvention | Image sensor structure and method of fabricating the same |
| abstract | A method of fabricating an image sensor structure is provided. The method of fabricating an image sensor structure comprises providing a substrate. An image sensor interconnect structure and a patterned electrode layer are formed on the substrate. An insulating layer, a first doped amorphous silicon layer are conformally formed on the patterned electrode layer and the image sensor interconnect structure not covered by the patterned electrode layer in sequence. A planarization process is proceeded to remove a portion of the first doped amorphous silicon layer and the insulating layer till the patterned electrode layer. A remaining first doped amorphous silicon layer and a remaining insulating layer are separated by the patterned electrode layer. A photodiode layer is formed on the patterned electrode layer, wherein a second doped amorphous silicon layer of the photodiode layer has a different conductive type form the remaining first doped amorphous silicon layer. |
| priorityDate | 2007-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.