| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49162 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2008-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75116c7fa61d074d75a1c375eeb329a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a673169a21baa5bd4e19a5bcd932faf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_311887369e099646f6c3b9567a9d6da5 |
| publicationDate |
2008-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200847284-A |
| titleOfInvention |
Method and apparatus for manufacturing semiconductor device |
| abstract |
Provided is a semiconductor device manufacturing method by which reliability of a metal cap layer and productivity are improved.The method includes an insulating layer step wherein an insulating layer (11) is laminated on a semiconductor substrate (2) having an element region (2b); a recessed section step wherein a recessed section (12) is formed on the insulating layer (11); a metal layer step wherein a metal layer (13) is embedded in the recessed section (12); a planarizing step wherein the surface of the insulating layer (11) and the surface of the metal layer (13) are planarized as substantially the same surface; and a metal cap layer step wherein a metal cap layer (16) which contains at least zirconium element and nitrogen element is formed on the surface of the insulating layer (11) and the surface of the metal layer (13), after the planarizing step. |
| priorityDate |
2007-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |