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publicationDate 2008-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200847281-A
titleOfInvention Method for forming insulating film and method for manufacturing semiconductor device
abstract A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N2O atmosphere and forming a silicon nitride film. This method may further include a step of performing second nitriding to the silicon oxynitride film, and furthermore, may include a step of performing second heat treatment to the silicon oxynitride film after the second nitriding.
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