http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200845306-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2007-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5ab9013ca8346a7fce2a850a45f31e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37660544ea1c79c0f38175e0fd59f9c9 |
| publicationDate | 2008-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200845306-A |
| titleOfInvention | Method for forming a semiconductor structure |
| abstract | The present invention provides a method for forming a semiconductor structure. The method includes providing a substrate, forming a insulating layer on the substrate, forming a silicon mask layer on the insulating layer, forming at least one contact opening to expose a portion of the substrate. An ion implantation process is performed to the contact opening. Next, a thermal oxidation process is performed to form a first oxide layer on the silicon mask layer and a second oxide layer on the exposed portion of the substrate within the contact opening. The thickness of the first oxide layer is thicker than that of the second oxide layer. Then, the second oxide layer is removed, and at least of a portion of the first oxide layer is remained on the substrate. A barrier layer is then formed on the sidewall of the contact opening, and a metal layer is formed over the barrier layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107873107-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107873107-B |
| priorityDate | 2007-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.