| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2008-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f73bae8d51cff769ad23a2ffee036378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_421de8a7ac25307ee1b7ecb7b512306a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35e1c4941fb97335a7e6e4f30b2e2263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d352978bcd5077268ace6d2b84123ed |
| publicationDate |
2008-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200845212-A |
| titleOfInvention |
Activated chemical process for enhancing material properties of dielectric films |
| abstract |
A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9269652-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I600659-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I475712-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I565794-B |
| priorityDate |
2007-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |