http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200844277-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d8592e72396d34ec614cfd6d58567269 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-18 |
| filingDate | 2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85b7a44f4ec971dbb00ee1584c59b867 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e45635aae9664f2b4db3ebcda80a92a5 |
| publicationDate | 2008-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200844277-A |
| titleOfInvention | Manufacturing methods for high purity silicon dioxide and metallurgy class polycrystalline silicon |
| abstract | The invention provides a manufacturing method for high purity silicon dioxide and metallurgy class polycrystalline silicon, including dissolving a silicon dioxide of a predetermined ratio in ammonium fluoride (NH4F) solution, heating that at a predetermined temperature, adding hot water at a predetermined temperature and stirring, filtering off solid residues, cooling the filtrate to room temperature to obtain ammonium silicon fluoride ((NH4)2SiF6) crystal. Then repeat the two steps set forth above a predetermined times to obtain ammonium silicon fluoride ((NH4)2SiF6) crystal with a predetermined purity. After that, introduce mass ammonia, heating the ammonium silicon fluoride ((NH4)2SiF6) crystal to perform a chemical reaction to obtain high purity silicon dioxide finally. The manufacturing method for metallurgy class polycrystalline silicon uses ammonium silicon fluoride ((NH4)2SiF6) as a starting material, placing it in a container and introducing a mixed gas of hydrogen/argon, heating the container at a predetermined temperature to perform a reduction reaction of ammonium silicon fluoride ((NH4)2SiF6), hydrogen and argon, stopping heating after a predetermined time period, cooling down the container naturally. When the container is cooled to an appropriate temperature, stop introducing mixed gas of hydrogen/argon, and metallurgy class polycrystalline silicon powder can be obtained in the container eventually. |
| priorityDate | 2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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