http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200843101-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 |
| filingDate | 2008-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4360b8273ce1491ff61c174b19afcb27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da081f5bbe59c7ef00675e8b50d57f64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27bf14955599d31b80923b0c0b344e3c |
| publicationDate | 2008-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200843101-A |
| titleOfInvention | Bipolar transistor with silicided sub-collector |
| abstract | Embodiments of the invention provide a semiconductor device including a collector in an active region; a first and a second sub-collector, the first sub-collector being a heavily doped semiconductor material adjacent to the collector and the second sub-collector being a silicided sub-collector next to the first sub-collector; and a silicided reach-through in contact with the second sub-collector, wherein the first and second sub-collectors and the silicided reach-throguh provide a continuous conductive pathway for electrical charges collected by the collector from the active region. Embodiments of the invention also provide methods of fabricating the same. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103107188-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103107188-A |
| priorityDate | 2007-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.