| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2253 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2007-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9e00a4e663fff9810c996d2c4dbc536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9c8ada1c871f8bece78cc8999960699
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d6535f12ece79965c8ae7807cd99442 |
| publicationDate |
2008-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200842952-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
A manufacturing method of semiconductor device comprising a first step of forming an ion implantation mask (103) in a partial region of the surface of a semiconductor (102), a second step of implanting ions of a first dopant into at least a part of the exposed region of the surface of the semiconductor (102) other than the region where the ion implantation mask (103) is formed and forming a first dopant implantation region (106), a third step of removing a part of the ion implantation mask (103) after the formation of the first dopant implantation region (106) to enlarge the exposed region of the surface of the semiconductor (102), and a fourth step of implanting ions of a second dopant into at least a part of the enlarged exposed region of the surface of the semiconductor (102) to form a second dopant implantation region (107). |
| priorityDate |
2006-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |