| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee1c19da359446fb5c4f0458a57b783d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21K1-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2007-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afaf23787423df9c9e81692766914b83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_768ff6e6a23ad28d42a1436924e346f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a98af4e7722aff086b3c6125a56dc78 |
| publicationDate |
2008-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200842939-A |
| titleOfInvention |
Reflective mask blank for EUV lithography, and substrate with function film for the mask blank |
| abstract |
Provided is a substrate having a conductive film for an EUV mask blank. The substrate prevents particle generation due to friction between an electrostatic chuck and the substrate. A substrate having a multilayer reflection film, and an EUV mask blank which use such substrate having the conductive film are also provided. The substrate having the conductive film is to be used for manufacturing the reflective mask blank for EUV lithography. The conductive film contains chromium (Cr) and nitrogen (N), the average concentration of N in the conductive film is 0.1 at% or more but not more than 40 at%, at least the surface crystalline status of the conductive film is amorphous, the sheet resistance value of the conductive film is 27 Omega/□ or lower, and the surface roughness (rms) of the conductive film is 0.5 nm or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I506355-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9612523-B2 |
| priorityDate |
2006-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |