| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| filingDate |
2007-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4de43afd6ca56bfbe832f7b241933039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe9089edee9b2b1dbc9c84beb0a69077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46d306fbcc2620e78645fd48f9fd4a02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aebb80bf04e023cf98601213ca4ca30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f28b1328f4113afdc32a6183722bd1ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2c039edc5a145a14495f3a0f65dfcc |
| publicationDate |
2008-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200840103-A |
| titleOfInvention |
Phase change memory device and method of fabricating the same |
| abstract |
A phase change memory device and method of manufacturing the same is provided. A first electrode having a first surface is provided on a substrate. A second electrode having a second surface at a different level from the first surface is on the substrate. The second electrode may be spaced apart from the first electrode. A third electrode may be formed corresponding to the first electrode. A fourth electrode may be formed corresponding to the second electrode. A first phase change pattern may be interposed between the first surface and the third electrode. A second phase change pattern may be interposed between the second surface and the fourth electrode. Upper surfaces of the first and second phase change patterns may be on the same plane. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I732543-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I717076-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11139430-B2 |
| priorityDate |
2007-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |