| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-633 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 |
| filingDate |
2007-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c26e40789934e2ba4a5e987daac0f4ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_963a384bf29eb953fff92e34b5a1c942
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81c791bb686f8f840fd3323e96983c90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_346462fc7b4a9f9b4c4349a51c190006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6b89c82588efe5125691a52d57aa573 |
| publicationDate |
2008-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200840035-A |
| titleOfInvention |
Device, and method for manufacturing the same |
| abstract |
In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin. |
| priorityDate |
2006-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |