http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200839939-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f063b8222ec3c8e746a415e7f364473 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2007-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8609212ff4cc383f44304215a279b367 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb519c6ade4307b0acd106520ba3bb7a |
| publicationDate | 2008-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200839939-A |
| titleOfInvention | Method for minimizing short between pair of deep trench capacitors |
| abstract | A method for minimizing the short between a pair of deep trench capacitors is provided. The method comprises forming a silicon nitride layer in a substrate located between the pair of deep trench capacitors, prior to the formation of a shallow trench isolation between the pair of deep trench capacitors. The formation of the silicon nitride layer can resolve the electrical leakage under the shallow trench isolation located between the pair of deep trench capacitors. |
| priorityDate | 2007-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.