| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5f708f49e9e89eb2d377058d7326c1f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate |
2007-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13cb4885e6b5d0a3b92f63d7da568aa7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60f6e2afaec42b5f385521fc8ea39c8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92b98e6db620f13aca63ac4849ce3b10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c78c8f57facf5de202d126822bee6313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6821dcc649503ee9c593c94df9ce9765 |
| publicationDate |
2008-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200839871-A |
| titleOfInvention |
Interlayer insulating film, wiring structure, electronic device and method of producing the same |
| abstract |
A wiring structure of a semiconductor device or the like includes an interlayer insulating film and a conductor. The interlayer insulating film has a fluorocarbon film formed on an underlying layer. The conductor is buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and has a low dielectric constant. The fluorocarbon film can be formed with a good reproducibility and is stable. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I423331-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8778810-B2 |
| priorityDate |
2006-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |