http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200839849-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2007-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88cc278816daf2e1a0ec2ff04924f611 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bbb0de42a2c8d8a0f6b1725f9e2fdc4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e9f05605fc3905b987df76f5c00f0b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aea2402ee5304455266c1834627bfff2 |
| publicationDate | 2008-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200839849-A |
| titleOfInvention | Method of forming selective area compound semiconductor epitaxial layer |
| abstract | A method of forming a selective area semiconductor compound epitaxy layer is provided. The method includes the step of using two silicon-containing precursors as gas source for implementing a process of manufacturing the selective area semiconductor compound epitaxy layer, so as to form a semiconductor compound epitaxy layer on an exposed monocrystalline silicon region of a substrate. |
| priorityDate | 2007-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.