http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200839450-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6820acf5ee3f4e7bed0b12b8f593972c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f86af23bcae64d2056688b8b8c4fa4d7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a5e27cb33dcee3594a1877478857e98 |
| publicationDate | 2008-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200839450-A |
| titleOfInvention | Pattern formation method |
| abstract | A method of forming pattern using a chemically amplified resist composition, includes: applying a lower layer film-forming material on a support to form a lower layer film; applying a silicon based hard mask-forming material on the lower layer film to form a hardmask; applying a chemically amplified negative-type resist composition on the hardmask to form a first resist film; exposing the first resist film selectively through a first mask pattern, followed by developing so as to form a first resist pattern; etching the hardmask using the first resist pattern as a mask to form a first pattern; applying a chemically amplified positive-type silicon based resist composition on the first pattern and the lower layer film to form a second resist film; exposing the second resist film selectively through a second mask pattern, followed by developing so as to form a second resist pattern; etching the lower layer film using the first pattern and the second resist pattern as a mask to form a second pattern. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I425317-B |
| priorityDate | 2006-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 286.