http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200837958-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136213 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a85a5b59af29f2673171670db75989b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a27d006a04ab192ca95e580d5904912 |
| publicationDate | 2008-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200837958-A |
| titleOfInvention | Semiconductor structure and fabricating method thereof for liquid crystal display device |
| abstract | A method for fabricating a semiconductor structure is provided. A semiconductor layer is formed in an active element area and a storage capacitor area of a substrate. A first inter-layer dielectric (ILD) layer is formed to cover the semiconductor layer. A gate and a first electrode are formed on the first ILD layer in the active element area and the storage capacitor area respectively. The first ILD layer under the gate is as gate dielectric layer. A doping process is implanted to form a source and a drain in the semiconductor layer in the active element area. A second ILD layer is formed to cover the gate and the first electrode, and a patterned conductive layer used for a pixel electrode is formed on thereof. A patterned third ILD layer is formed to cover the patterned conductive layer, and a plurality of contact windows is formed in the first, second and third ILD layers to expose the source, drain, parts of patterned conductive layer and first electrode. A second electrode is formed on the third ILD layer to electrically connect with the first electrode. And, a source/drain conductor is formed to electrically connect the semiconductor layer with the patterned conductive layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502573-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103413820-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I492389-B |
| priorityDate | 2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.