| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d9f3ca41550d315642580237250c5b0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2007-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88a7133283cd04bac52e467f9c262764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74f89a3a6cb7d9a482b09163cf5869ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db790f9e6852e62a14ee75e641f0a40a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1370061c732fd78eac90aa8cdc27c1b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7ca32c741f5e1f7c30241773e9fa147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_153aaa5172f256b6d15d891da9818c78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9d10adcf2967226c66bbe7690d7cfc0 |
| publicationDate |
2008-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200837941-A |
| titleOfInvention |
Silicide strapping in imager transfer gate device |
| abstract |
A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9698185-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I585958-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431456-B2 |
| priorityDate |
2006-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |