http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200837501-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2007-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d9feb8c121346e11a4e5c43fdc00588 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f1122c5a9aa7057aad92e677c0c3382 |
| publicationDate | 2008-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200837501-A |
| titleOfInvention | Composition for forming resist underlayer film and method for forming pattern |
| abstract | This invention provides a composition for resist lower layer film formation, which has excellent etching resistance and, in a dry etching process, is less likely to cause bending of a lower layer film pattern, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility. The composition for resist lower layer film formation comprises (A) an aminated fullerene comprising at least one amino group attached to a fullerene skeleton and (B) a solvent. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I616723-B |
| priorityDate | 2006-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 250.