http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200837179-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e4c608a8531ea588aab7e23318e09a77 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2007-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96134e69c8e2bf9526ee2b31ca44552d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b5b777bf6a9ef5e74307ba55beccd3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ae9aea3141bf5fb9147de4d7b45f024 |
| publicationDate | 2008-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200837179-A |
| titleOfInvention | Chemical mechanical polishing slurry for polishing polysilicon |
| abstract | The invention discloses a chemical mechanical polishing slurry for polishing polysilicon. The polishing slurry comprises abrasive particles and water, furthermore, comprisess one or more quaternary ammonium salt cation surfactant. The polishing slurry of the invention can better polish polysilicon under an alkalinic condition, obviously decrease the removal rate of polysilicon and the selectivity of polysilicon to silicon dioxide, and obviously improve the planarity efficiency of polysilicon. |
| priorityDate | 2007-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.