http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200836242-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 2007-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b1dd2be2cf235f80fc10d90c1e975db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24ee54debb631e3eaf3b8d68eea06a4c
publicationDate 2008-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200836242-A
titleOfInvention Method for forming ring pattern
abstract A method for forming a ring pattern is disclosed. The ring pattern has a first wall and a second wall. The method includes the following steps: (a) providing a substrate; (b) forming a dielectric layer on the substrate; (c) forming a first patterned photo resist on the dielectric layer, the first patterned photo resist defining the first wall; (d) etching a portion of the dielectric layer unprotected by the first patterned photo resist to a predetermined depth, and then removing the first patterned photo resist; (e) forming a second patterned photo resist on the dielectric layer, the second patterned photo resist defining the second wall; (f) etching a portion of the dielectric layer unprotected by the second patterned photo resist, and then removing the second patterned photo resist to form the ring pattern having the first wall and the second wall.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10832910-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312086-B2
priorityDate 2007-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 21.