http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200832762-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2007-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c94922852cc404b372513e56db829a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_157f7fa1b23c26a1c0e002f962b3768f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4464638e7e10ef378cb851ee455b6e6f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99cdf31a5ca1191c87bb35640f446d55 |
| publicationDate | 2008-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200832762-A |
| titleOfInvention | Process for producing light emitting element |
| abstract | A p-type AlGaAs light takeout layer (20) having a (100) face is subjected to surface roughening treatment by an etching liquid FEA, for surface roughening, which contains acetic acid, hydrofluoric acid, nitric acid, iodine, and water so that the total amount thereof is not less than 90% by mass and the total content (by mass) of acetic acid, hydrofluoric acid, nitric acid, and iodine is higher than the content (by mass) of water. Prior to the step of surface roughening with the etching liquid FEA for surface roughening, the first main surface (main light takeout region) of a laminate formed of AlGaAs is pretreated by bringing the first main surface into contact with a pretreating liquid formed of an aqueous hydrogen peroxide sulfate solution, whereby the occurrence of unevenly protrusion formed state of a wafer produced by the surface roughening can be effectively prevented. The above constitution can realize even surface roughening treatment of the light takeout face in the AlGaAs light emitting element and in its turn can provide a production process of a light emitting element which is less likely to cause an unevenly surface roughened state. |
| priorityDate | 2006-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.