| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d380ea394238f732e0ab98fa00bad429 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2007-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f872c60ee19086d18ea61aefe90c8ff7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf913d0a04bcd9bf01e0990ee9f4cf12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ca4b9222caa11350e2dccacd1de0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b00e6e56451cc7e64daa97627196a209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85040a66af32c17cd4e583c0b7431b59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f392f3e0295c3d34e17d839fd2c485e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65bf5aed60e85eb2e9136950118b33e4 |
| publicationDate |
2008-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200832707-A |
| titleOfInvention |
Split gate formation with high density plasma (HDP) oxide layer inter-polysilicon insulation layer |
| abstract |
The invention discloses method of for manufacturing a trenched semiconductor power device with split gate filing a trench opened in a semiconductor substrate wherein the split gate is separated by an inter-poly insulation layer disposed between a top and a bottom gate segments. The method further includes a step of forming the inter-poly layer by applying a RTP process after a HDP oxide deposition process to bring an etch rate of the HDP oxide layer close to an etch rate of a thermal oxide. |
| priorityDate |
2006-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |